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IXFH 24N80P IXFK 24N80P
IXFT 24N80P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-247 AD (IXFH) Outline
Min. Typ. Max.
g fs
C iss
V DS = 20 V; I D = 0.5 I D25 , pulse test
15
25
7200
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
470
pF
1
2
3
C rss
t d(on)
26
32
pF
ns
t r
t d(off)
V GS = 10 V, V DS = 0.5 I D25
R G =2 Ω (External)
27
75
ns
ns
t f
24
ns
Dim.
Millimeter
Inches
Q g(on)
105
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
b 1
b 2
Q gs
Q gd
R thJC
R thCS
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
TO-247
TO-264
30
33
0.21
0.15
nC
nC
0.19 ° C/W
° C/W
° C/W
2.2 2.54
2.2 2.6
b 1.0 1.4
1.65 2.13
2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.177
.140 .144
0.232 0.252
.170 .216
I S
I SM
V SD
t rr
Q RM
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25A, -di/dt = 100 A/ μ s
V R = 100V
0.8
24
55
1.5
250
A
A
V
ns
μ C
S 6.15 BSC
TO-264 (IXFK) Outline
242 BSC
I RM
TO-268 (IXFT)Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
6.0
A
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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